PART |
Description |
Maker |
DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP030 |
-300 mA, PNP silicon transistor Extremely low collector-to-emitter saturation voltage
|
AUK[AUK corp] KODENSHI KOREA CORP.
|
DP500F |
PNP Silicon Transistor (Extremely low collector-to-emitter saturation voltage)
|
AUK[AUK corp]
|
PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET From old datasheet system mTrenchMOS extremely low level FET
|
Philips
|
2SB1537 |
Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC.
|
TY Semiconductor Co., Ltd
|
2PB709AW 2PB709AQW 2PB709ASW 2PB709ARW |
High collector current (max. 100 mA). Low collector-emitter saturation voltage (max. 500 mV).
|
TY Semiconductor Co., Ltd
|
PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
BXA10-48S12 BXA10-48S12W BXA10-48S15 BXA10 BXA10-1 |
2-line IPAD", EMI filter including ESD protection DC至DC转换 6-line IPAD", EMI filter including ESD protection 2-line IPAD", EMI filter including ESD protection 6-line IPAD", low capacitance EMI filter and ESD protection Mini and micro SD Card - EMI filtering and 25 kV ESD protection 7-line IPAD", EMI filter and ESD protection for LCD and cameras 6 line low capacitance EMI filter and ESD protection DC to DC Converter 8 line low capacitance EMI filter and ESD protection 8-10W Wide Input DC/DC Converters
|
ARTESYN[Artesyn Technologies]
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
BC369 C62702-C748 |
From old datasheet system PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|